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| BFG 19S NPN Silicon RF Transistor * For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA * CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 3 100 12 W 1 150 - 65 ... + 150 - 65 ... + 150 75 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 75 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V A 100 nA 100 A 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFG 19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4 5.5 0.85 0.4 4.6 - GHz pF 1.4 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 11 5 dBm 35 13.5 8 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz Third order intercept point IP3 IC = 70 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 19S Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 TS 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 RthJS K/W P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-13-1996 BFG 19S Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 2.6 pF 2.2 6.0 GHz Ccb 2.0 1.8 1.6 1.4 fT 5.0 4.5 4.0 3.5 5V 3V 2V 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 4 8 12 16 V VR 22 1.5 1.0 0 20 40 60 80 mA IC 120 0.7V 3.0 2.5 2.0 1V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 14 10V 5V dB 3V 2V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V 2 0 20 40 60 80 mA IC 120 0 0.7V -2 0 20 40 60 80 mA IC 120 Semiconductor Group 5 Dec-13-1996 BFG 19S Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 14 VCE = Parameter, f = 900MHz 40 IC=70mA dB 0.9GHz 8V 5V 30 dBm 0.9GHz G 10 IP3 8 1.8GHz 25 3V 6 1.8GHz 20 4 1V 2 0 0 2 4 6 8 V 12 15 2V 10 0 20 40 60 80 V CE mA IC 120 Power Gain Gma, Gms = f(f) VCE = Parameter 36 Power Gain |S21|2= f(f) VCE = Parameter 32 IC=70mA dB IC=70mA dB G 28 24 S21 24 20 16 20 12 16 8 12 8 4 0 0.0 10V 2V 1V 0.7V GHz 3.5 f 4 0 -4 -8 0.0 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 6 Dec-13-1996 |
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